Soft erasure of memory cells
US9001578B2 · kind B2 · utility
4Cited by
5References
20Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Sep 11, 2012 |
| Grant date | Apr 7, 2015 |
| Priority date | — |
| Expiry date | Oct 9, 2033 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C2211/5646
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
Apparatus and method for managing data in a memory, such as but not limited to a flash memory array. In accordance with some embodiments, a soft erasure is performed on a block of memory cells by toggling an erasure status value without otherwise affecting a written state of the cells in the block. The memory cells are subsequently overwritten with a set of data using a write polarity direction determined responsive to the toggled erasure status value.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.