Electro-optical modulator
US9002144B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jun 8, 2010 |
| Grant date | Apr 7, 2015 |
| Priority date | — |
| Expiry date | Feb 24, 2031 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG02F2202/105
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A downsized, low-power electro-optical modulator that achieves reducing both of the additional resistance in the modulation portion and the optical loss each caused by electrodes at the same time is provided. The electro-optical modulator includes a rib waveguide formed by stacking a second semiconductor layer 9 having a different conductivity type from a first semiconductor layer 8 on the first semiconductor layer 8 via a dielectric film 11, and the semiconductor layers 8 and 9 are connectable to an external terminal via highly-doped portions 4 and 10, respectively. In a region in the vicinity of contact surfaces of the semiconductor layers 8 and 9 with the dielectric film 11, a free carrier is accumulated, removed, or inverted by an electrical signal from the external terminal, and whereby a concentration of the free carrier in an electric field region of an optical signal is modulated, so that a phase of the optical signal can be modulated. At least one of the semiconductor layers 8 and 9 is wider than the stacked portion. At least one of the highly-doped portions 4 and 10 is formed outside the stacked portion.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.