Method for manufacturing silicon carbide semiconductor device
US9005462B2 · kind B2 · utility
0Cited by
3References
5Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Sep 9, 2011 |
| Grant date | Apr 14, 2015 |
| Priority date | — |
| Expiry date | Sep 9, 2031 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D8/411
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
In a method for manufacturing a silicon carbide semiconductor device, a conductive layer is formed on a silicon carbide layer. The silicon carbide layer and the conductive layer react with each other thus forming an alloy layer formed of a reaction layer in contact with the silicon carbide layer and a silicide layer on the reaction layer. A carbon component is removed from the silicide layer. A portion of the silicide layer is removed using an acid thus exposing at least a portion of the reaction layer. An electrode layer is formed on an upper side of the exposed reaction layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.