Sputtering target of oxide semiconductors and the manufacturing methods of oxide semiconductor layers
US9005489B2 · kind B2 · utility
2Cited by
2References
12Claims
0Family size
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Key dates
| Filing date | Mar 16, 2011 |
| Grant date | Apr 14, 2015 |
| Priority date | — |
| Expiry date | Oct 25, 2033 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/02573
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A technique capable of forming an oxide semiconductor target with a high quality in a low cost is provided. In a step of manufacturing zinc tin oxide (ZTO target) used in manufacturing an oxide semiconductor forming a channel layer of a thin-film transistor, by purposely adding the group IV element (C, Si, or Ge) or the group V element (N, P, or As) to a raw material, excessive carriers caused by the group III element (Al) mixed in the step of manufacturing the ZTO target are suppressed, and a thin-film transistor having good current (Id)-voltage (Vg) characteristics is achieved.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.