Method for the production of a substrate having a coating comprising copper, and coated substrate and device prepared by this method

US9005705B2 · kind B2 · utility

Assignees

• Fraunhofer-Gesellschaft zur förderung der angewandten Forschung e.V. · DE
• Technische Universität Chemnitz · DE

Inventors

• Thomas Waechtler · Kitzscher, DE
• Stefan Schulz · Berlin, DE
• Thomas Gessner · Plymouth, US
• Steve Mueller · Reinsdorf, DE
• André Tuchscherer · Chemnitz, DE
• Heinrich Lang · Ergersheim, DE

Key dates

• Filing date: Sep 14, 2011
• Grant date: Apr 14, 2015
• Expiry date: Jun 28, 2032

Classification

• Technology area (CPC H): Electricity
• CPC primary: H01L21/76898
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

A method for producing a substrate with a copper or a copper-containing coating is disclosed. The method comprises a first step wherein a first precursor, a second precursor and a substrate are provided. The first precursor is a copper complex that contains no fluorine and the second precursor is selected from a ruthenium complex, a nickel complex, a palladium complex or mixtures thereof. In the second step, a layer is deposited at least on partial regions of a surface of the substrate by using the first precursor and the second precursor by means of atomic layer deposition (ALD). The molar ratio of the first precursor:second precursor used for the ALD extends from 90:10 to 99.99:0.01. The obtained layer contains copper and at least one of ruthenium, nickel and palladium. Finally, a reduction is performed step in which a reducing agent acts on the substrate obtained after depositing the copper-containing layer.