Patent · US Active

Process for depositing films simultaneously onto both sides of a substrate

US9005718B2 · kind B2 · utility

0Cited by

6References

11Claims

0Family size

Assignee

AGC GLASS EUROPE · BE

Inventors

Eric Tixhon · Louvain-la-Neuve, BE
Joseph Leclercq · Evere, BE
Eric Michel · Gosselies, BE

Key dates

Filing date	Jul 16, 2009
Grant date	Apr 14, 2015
Priority date	—
Expiry date	Jul 29, 2032

Classification

Technology area (CPC C)Chemistry; Metallurgy
CPC primaryC03C2218/365
WIPO fieldSurface technology, coating
WIPO sectorChemistry

Abstract

A process for the simultaneous deposition of films onto both sides of a substrate (2), which comprises in particular introducing a substrate (2) into a reaction chamber (106, 206) or making said substrate run therethrough, in which chamber at least two electrodes (110, 210) are placed. At least one dielectric barrier (14, 114) is placed between these at least two electrodes (110, 210). An adjustable inductor (L) is placed in the secondary circuit of the transformer in parallel with the circuit comprising the at least two electrodes. A high-frequency electrical voltage is generated, said voltage being such that it generates a filamentary plasma (112, 212) on each side of the substrate between the at least two electrodes (110, 210).

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.