Method for forming anodic oxide film, and aluminum alloy member using the same
US9005765B2 · kind B2 · utility
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11Claims
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Key dates
| Filing date | Sep 16, 2009 |
| Grant date | Apr 14, 2015 |
| Priority date | — |
| Expiry date | Nov 21, 2029 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC25D11/024
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
Provided is an anodic oxide processing method in which the generation of cracks is suppressed in an anodic oxide film formed on an aluminum alloy substrate surface, such as an inner wall of a vacuum chamber of a plasma processing device, and an anodic oxide film having low heat reflectivity and a high withstand voltage is formed with high efficiency. The method for forming an anodic oxide film involves forming the anodic oxide film on the surface of a JIS 6061 aluminum alloy substrate in a sulfuric acid solution or a mixed acid solution of sulfuric acid and oxalic acid.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.