Pre-patterned hard mask for ultrafast lithographic imaging
US9005875B2 · kind B2 · utility
8Cited by
0References
20Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Mar 15, 2013 |
| Grant date | Apr 14, 2015 |
| Priority date | — |
| Expiry date | Jun 15, 2033 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10T428/24851
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A method of fabricating a substrate including coating a first resist onto a hardmask, exposing regions of the first resist to electromagnetic radiation at a dose of 10.0 mJ/cm2 or greater and removing a portion of said the and forming guiding features. The method also includes etching the hardmask to form isolating features in the hardmask, applying a second resist within the isolating features forming regions of the second resist in the hardmask, and exposing regions of the second resist to electromagnetic radiation having a dose of less than 10.0 mJ/cm2 and forming elements.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.