Flip light emitting diode chip and method of fabricating the same
US9006005B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Apr 14, 2014 |
| Grant date | Apr 14, 2015 |
| Priority date | — |
| Expiry date | Apr 14, 2034 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H20/835
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of fabricating a light emitting diode device comprises depositing conductive material to cover a portion of surface of a conductive and reflective layer to form a first contact pad, and surfaces between adjacent first trenches to form a second contact pad; and depositing a first passivation layer over uncovered portion of surface of the conductive and reflective layer to form a first planar passivation contact surface between the first contact pad and the second trench and depositing bonding material to cover a portion of surface of the first contact pad, a portion of the second contact pad and a portion of the first planar passivation contact to form a first light emitting diode bonding pad on the first contact pad, a second light emitting diode bonding pad on the second contact pad, and a third light emitting diode bonding pad on the first planar passivation contact.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.