Radiation detectors and methods of fabricating radiation detectors

US9006010B2 · kind B2 · utility

Assignee

• General Electric Company · US

Inventors

• Arie Shahar · Afula, IL
• Eliezer Traub · Ramat Gan, IL
• Diego Sclar · Ashdod, IL
• Peter Rusian · Ashdod, IL

Key dates

• Filing date: Nov 22, 2011
• Grant date: Apr 14, 2015
• Expiry date: Dec 31, 2032

Classification

• Technology area (CPC Y): Emerging Cross-Sectional Technologies
• CPC primary: Y10S438/959

Abstract

Radiation detectors and methods of fabricating radiation detectors are provided. One method includes mechanically polishing at least a first surface of a semiconductor wafer using a polishing sequence including a plurality of polishing steps, wherein a last polishing step of the polishing sequence includes polishing with a slurry having a grain size smaller than about 0.1 μm to create a polished first surface. The method also includes applying (i) an encapsulation layer on a top of the polished first surface to seal the polished first surface and (ii) a photoresist layer on top of the encapsulation layer on the polished first surface. The method further includes creating undercuts of the encapsulation layer under the photoresist layer. The method additionally includes partially etching the polished first surface of the semiconductor via the openings in the photoresist layer and in the encapsulation layer to partially etch the semiconductor creating etched regions.