Bipolar punch-through semiconductor device and method for manufacturing such a semiconductor device

US9006041B2 · kind B2 · utility

Assignee

• ABB TECHNOLOGY AG · CH

Inventors

• Munaf Rahimo · Uezwil, CH
• Arnost Kopta · Zürich, CH
• Thomas Clausen · Alsbach, DE
• Maxi Andenna · Fislisbach, CH

Key dates

• Filing date: Oct 4, 2013
• Grant date: Apr 14, 2015
• Expiry date: Oct 4, 2033

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D62/60

Abstract

A method for manufacturing a bipolar punch-through semiconductor device is disclosed, which includes providing a wafer having a first and a second side, wherein on the first side a high-doped layer of the first conductivity type having constant high doping concentration is arranged; epitaxially growing a low-doped layer of the first conductivity type on the first side; performing a diffusion step by which a diffused inter-space region is created at the inter-space of the layers; creating at least one layer of the second conductivity type on the first side; and reducing the wafer thickness within the high-doped layer on the second side so that a buffer layer is created, which can include the inter-space region and the remaining part of the high-doped layer, wherein the doping profile of the buffer layer decreases steadily from the doping concentration of the high-doped region to the doping concentration of the drift layer.