High voltage FINFET structure

US9006055B2 · kind B2 · utility

Assignee

• GlobalFoundries Singapore Pte. Ltd. · SG

Inventors

• Han Xiao · Coquitlam, CA
• Shaoqiang Zhang · Dongguan, CN
• Sanford Chu · Singapore, SG
• Liming Li · Singapore, SG

Key dates

• Filing date: Jan 30, 2013
• Grant date: Apr 14, 2015
• Expiry date: Apr 13, 2033

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D30/6215

Abstract

Methods for forming FIN-shaped field effect transistors (FINFETs) capable of withstanding high voltage applications and the resulting devices are disclosed. Embodiments include forming a source and a drain on a substrate, forming a thin body (FIN) on the substrate and connecting the source and the drain, forming a gate over top and side surfaces of a first part of the FIN, thereby defining a drain-side FIN region of the FIN between the gate and the drain, and forming a shielding region over top and side surfaces of a second part of the FIN in the drain-side FIN region.