Vertical metal insulator metal capacitor
US9006061B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jul 22, 2014 |
| Grant date | Apr 14, 2015 |
| Priority date | — |
| Expiry date | Jul 22, 2034 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/0002
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
A method of forming a capacitor comprises forming a first electrode of the capacitor over a substrate. The first electrode includes a bottom conductive plane and a plurality of first vertical conductive structures on the bottom conductive plane. The method also comprises forming an insulating structure over the first electrode. The method further comprises forming a second electrode of the capacitor over the insulating structure. The second electrode includes a top conductive plane and a plurality of second vertical conductive structures under the top conductive plane. The first vertical conductive structures of the plurality of first vertical conductive structures and the second vertical conductive structures of the plurality of second vertical conductive structures are interlaced with each other.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.