Dopant for a hole conductor layer for organic semiconductor components, and use thereof

US9006716B2 · kind B2 · utility

Assignee

• OSRAM Opto Semiconductors GmbH · DE

Inventors

• David Hartmann · Erlangen, DE
• Sabine Szyszkowski · Dachsbach, DE
• Andreas Kanitz · Edenkoben, DE
• Anna Maltenberger · Leutenbach, DE
• Wiebke Sarfert · Herzogenaurach, DE
• Guenter Schmid · Hemhofen, DE
• Jan Hauke Wemken · Koblenzer Straße, DE

Key dates

• Filing date: Mar 31, 2011
• Grant date: Apr 14, 2015
• Expiry date: Oct 26, 2031

Classification

• Technology area (CPC Y): Emerging Cross-Sectional Technologies
• CPC primary: Y02E10/549
• WIPO field: Basic materials chemistry
• WIPO sector: Chemistry

Abstract

The invention relates to novel metal-organic materials for hole injection layers in organic electronic components. For example, in light-emitting components such as organic light diodes (OLED) or organic light-emitting electrochemical cells (OLEEC) or organic field effect transistors or organic solar cells or organic photo detectors. Luminescence (cd/m2), efficiency (cd/A), and service life (h) of organic electronic components such as from organic light diodes in particular are highly dependent on the exciton thickness in the light-emitting layer and on the quality of the charge carrier injection and are also limited by same, among other things. The invention relates to a hole injection layer consisting of quadratic planar mononuclear transition metal complexes such as copper 2+ complexes, for example, which are embedded into a hole-conducting matrix.