Organic light emitting ambipolar field effect transistor with distributed light emission

US9006726B2 · kind B2 · utility

Assignee

• E.T.C. S.R.L. · IT

Inventors

• Raffaella Capelli · Bologna, IT
• Gianluca Generali · Bologna, IT
• Michele Muccini · Bologna, IT
• Stefano Toffanin · Piove di Sacco, IT

Key dates

• Filing date: Feb 21, 2013
• Grant date: Apr 14, 2015
• Expiry date: Feb 21, 2033

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10K2101/40

Abstract

An organic ambipolar light emitting field effect transistor having an architecture with layers stacked one over the other, adapted to generate a diffused illumination is described. The transistor has a gate electrode, a dielectric layer superposed to the gate electrode, an ambipolar channel superposed to the dielectric layer having a P-type semiconductor layer whose energy band is determined by its highest occupied molecular orbital HOMO-SCp and lowest unoccupied molecular orbital LUMO-SCp, a N-type semiconductor layer whose energy band is determined by its highest occupied molecular orbital HOMO-SCn and lowest unoccupied molecular orbital LUMO-SCn and a light emitting layer adapted to allow recombination of charge carriers of opposite sign, interposed between the P-type semiconductor layer and the N-type semiconductor layer, whose energy band is determined by its highest occupied molecular orbital HOMO-R and lowest unoccupied molecular orbital LUMO-R, respectively; a source electrode adapted to inject charges of a first type and a drain electrode adapted to inject charges of a second type, said source electrode and drain electrode being in contract with a same layer of said P-type…