Patent · US Active

Aggregation of semiconductor devices and the method thereof

US9006756B2 · kind B2 · utility

1Cited by

5References

16Claims

0Family size

Assignee

Epistar Corporation · TW

Inventors

Hsu-Cheng Lin · Hsinchu, TW
Ching-Yi Chiu · Hsinchu, TW
Pei-Shan Fang · Hsinchu, TW
Chun-Chang Chen · Tainan, TW

Key dates

Filing date	Jun 5, 2013
Grant date	Apr 14, 2015
Priority date	—
Expiry date	Jun 5, 2033

Classification

Technology area (CPC Y)Emerging Cross-Sectional Technologies
CPC primaryY02E10/50
WIPO fieldSemiconductors
WIPO sectorElectrical engineering

Abstract

An aggregation of semiconductor devices, comprising: a first layer comprising a first surface and a second surface; a second layer comprising a first region and a second region; and a plurality of semiconductor devices disposed between the first layer and the second region wherein a shape of the second region comprises a curve and a mark.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.