Patent · US Active

Optoelectronic device and the manufacturing method thereof

US9006774B2 · kind B2 · utility

2Cited by
6References
20Claims
0Family size

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Inventors

Key dates

Filing dateJul 1, 2013
Grant dateApr 14, 2015
Priority date
Expiry dateJul 1, 2033

Classification

  • Technology area (CPC H)Electricity
  • CPC primaryH10H20/84

Abstract

An optoelectronic device comprising a substrate; a first window layer on the substrate, having a first sheet resistance, a first thickness, and a first impurity concentration; a second window layer having a second sheet resistance, a second thickness, and a second impurity concentration; and a semiconductor system between the first window layer and the second window layer; wherein the second window layer comprises a semiconductor material different from the semiconductor system, and the second sheet resistance is greater than the first sheet resistance.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.