Method for manufacturing a sensor device of a gaseous substance of interest
US9006796B2 · kind B2 · utility
Assignee
Inventor
Key dates
| Filing date | Oct 21, 2011 |
| Grant date | Apr 14, 2015 |
| Priority date | — |
| Expiry date | Mar 30, 2033 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG01N27/4141
- WIPO fieldMeasurement
- WIPO sectorInstruments
Abstract
A method manufactures a sensor device for sensing a gaseous substance and includes a thin film transistor, which includes a source electrode, a drain electrode and a gate electrode; and an element sensitive to the gaseous substance. In particular, the method includes: forming a first metallic layer on a substrate; defining and patterning the first metallic layer for realizing the gate electrode; depositing a dielectric layer above the gate electrode; depositing a second metallic layer above the layer of dielectric material, defining and patterning the second metallic layer for realizing the source electrode and the drain electrode, and forming the sensitive element by filling a channel region of the thin film transistor with an active layer sensitive to the gaseous substance.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.