Radio frequency and microwave devices and methods of use
US9006799B2 · kind B2 · utility
Assignee
Inventor
Key dates
| Filing date | Nov 4, 2014 |
| Grant date | Apr 14, 2015 |
| Priority date | — |
| Expiry date | Nov 4, 2034 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D84/82
- WIPO fieldBasic communication processes
- WIPO sectorElectrical engineering
Abstract
Radio frequency and microwave devices and methods of use are provided herein. According to some embodiments, the present technology may comprise an ohmic layer for use in a field effect transistor that includes a plurality of strips disposed on a substrate, the plurality of strips comprising alternating source strips and drain strips, with adjacent strips being spaced apart from one another to form a series of channels, a gate finger segment disposed in each of the series of channels, and a plurality of gate finger pads disposed in an alternating pattern around a periphery of the plurality of strips such that each gate finger segment is associated with two gate finger pads.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.