Trench-gate RESURF semiconductor device and manufacturing method
US9006822B2 · kind B2 · utility
13Cited by
5References
12Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Oct 24, 2012 |
| Grant date | Apr 14, 2015 |
| Priority date | — |
| Expiry date | Oct 24, 2032 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/516
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A trench-gate device with lateral RESURF pillars has an additional implant beneath the gate trench. The additional implant reduces the effective width of the semiconductor drift region between the RESURF pillars, and this provides additional gate shielding which improves the electrical characteristics of the device.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.