Photovoltaic device with through-vias
US9006851B2 · kind B2 · utility
Assignees
Inventors
Key dates
| Filing date | Aug 4, 2011 |
| Grant date | Apr 14, 2015 |
| Priority date | — |
| Expiry date | Jan 1, 2032 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY02E10/50
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A stand-alone device comprising a silicon wafer having its front surface including a first layer of a first conductivity type and a second layer of a second conductivity type forming a photovoltaic cell; first vias crossing the wafer from the rear surface of the first layer and second vias crossing the wafer from the rear surface of the second layer; metallization levels on the rear surface of the wafer, the external level of these metallization levels defining contact pads; an antenna formed in one of the metallization levels; and one or several chips assembled on said pads; the metallization levels being shaped to provide selected interconnects between the different elements of the device.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.