High-voltage trench junction barrier Schottky diode

US9006858B2 · kind B2 · utility

Assignee

• Robert Bosch GmbH · DE

Inventors

• Ning Qu · Beijing, CN
• Alfred Goerlach · Tübingen, DE

Key dates

• Filing date: Nov 12, 2012
• Grant date: Apr 14, 2015
• Expiry date: Nov 12, 2032

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D64/64

Abstract

In a Schottky diode having an n+-type substrate, an n-type epitaxial layer, at least two p-doped trenches introduced into the n-type epitaxial layer, mesa regions between adjacent trenches, a metal layer functioning as a cathode electrode, and another metal layer functioning as an anode electrode, the thickness of the epitaxial layer is more than four times the depth of the trenches.