Process for producing a metal device housed in a closed housing within an integrated circuit, and corresponding integrated circuit
US9006897B2 · kind B2 · utility
Assignee
Inventor
Key dates
| Filing date | Jan 7, 2014 |
| Grant date | Apr 14, 2015 |
| Priority date | — |
| Expiry date | Jan 7, 2034 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/0002
- WIPO fieldAudio-visual technology
- WIPO sectorElectrical engineering
Abstract
An integrated circuit includes a number of metallization levels separated by an insulating region disposed over a substrate. A housing includes walls formed from metal portions produced in various metallization levels. A metal device is housed in the housing. An aperture is produced in at least one wall of the housing. An external mechanism outside of the housing is configured so as to form an obstacle to diffusion of a fluid out of the housing through the at least one aperture. At least one through-metallization passes through the external mechanism and penetrates into the housing through the aperture in order to make contact with at least one element of the metal device.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.