Semiconductor device with a current sampler and a start-up structure
US9007099B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Mar 27, 2014 |
| Grant date | Apr 14, 2015 |
| Priority date | — |
| Expiry date | Mar 27, 2034 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH03K17/082
- WIPO fieldControl
- WIPO sectorInstruments
Abstract
A semiconductor device with a current sampler and a start-up structure, comprises first, second and third high-voltage transistors, and a resistor, wherein: a drain terminal of the first transistor is respectively connected to a drain terminal of the second transistor, a drain terminal of the third transistor and one end of the resistor; a source terminal of the first transistor is grounded, and a gate terminal of the first transistor is connected to a gate terminal of the second transistor; the other end of the resistor is connected to a gate terminal of the third transistor; wherein the resistor is wound and formed in a common voltage withstand region of the first transistor, the second transistor and the third transistor, or in a voltage withstand region of the first transistor only, or in the voltage withstand region of the third transistor only.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.