Defect-mitigation layers in electrochromic devices
US9007674B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Feb 8, 2013 |
| Grant date | Apr 14, 2015 |
| Priority date | — |
| Expiry date | Feb 8, 2033 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG02F2201/508
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
Electrochromic devices and methods may employ the addition of a defect-mitigating insulating layer which prevents electronically conducting layers and/or electrochromically active layers from contacting layers of the opposite polarity and creating a short circuit in regions where defects form. In some embodiments, an encapsulating layer is provided to encapsulate particles and prevent them from ejecting from the device stack and risking a short circuit when subsequent layers are deposited. The insulating layer may have an electronic resistivity of between about 1 and 108 Ohm-cm. In some embodiments, the insulating layer contains one or more of the following metal oxides: aluminum oxide, zinc oxide, tin oxide, silicon aluminum oxide, cerium oxide, tungsten oxide, nickel tungsten oxide, and oxidized indium tin oxide. Carbides, nitrides, oxynitrides, and oxycarbides may also be used.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.