Semiconductor memory device having faulty cells
US9007830B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Aug 6, 2013 |
| Grant date | Apr 14, 2015 |
| Priority date | — |
| Expiry date | Aug 6, 2033 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C29/88
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A nonvolatile memory apparatus includes a control unit, a main storage medium with an electrically reloadable nonvolatile memory adapted to be operable even when faulty memory cells exist therein, and a storage region storing registered address values of faulty regions of the main storage medium containing the faulty memory cells. Data which is stored in the electrically reloadable nonvolatile memory is divided into blocks, each block having a plurality of data to be administrated and which is assigned an access address by the control unit. An administrative information region is provided in each block. The control unit carries out access requests of the main storage medium and the administration of faulty regions and the number of occurrences of reloading of respective memory cells of the main storage medium.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.