System for frequency conversion, semiconducting device and method for operating and manufacturing the same
US9008145B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Apr 10, 2013 |
| Grant date | Apr 14, 2015 |
| Priority date | — |
| Expiry date | Jul 27, 2033 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01S5/1203
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
An edge-emitting semiconductor component, comprising a semiconductor substrate layer and epitaxially on-grown semiconductor layers, is disclosed. According to the invention an active zone of the semiconductor layers is designed to absorb pumped optical radiation of a first wavelength by multi-photon absorption and generate an optical radiation of a second wavelength that is shorter than the first wavelength. A step of multiplying the first wavelength of the pumped optical radiation to a second harmonic using a nonlinear crystal is advantageously made redundant. Furthermore, a system for frequency conversion is disclosed, comprising the semiconductor component, a pump laser diode designed to generate the pumped optical radiation and methods for manufacturing the semiconductor component and operating the system for frequency conversion.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.