Method for determining the temperature of a power semiconductor
US9010999B2 · kind B2 · utility
Assignee
Inventor
Key dates
| Filing date | May 17, 2011 |
| Grant date | Apr 21, 2015 |
| Priority date | — |
| Expiry date | Aug 2, 2032 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/13055
- WIPO fieldMeasurement
- WIPO sectorInstruments
Abstract
A method for determining the temperature of a power semiconductor, wherein a first control contact is connected to a first pole of a series resistor integrated in the power semiconductor. A second pole—which continues to the power semiconductor—of the series resistor is connected to a second control contact. A first control contact and a second control contact are connected to a first connection terminal and second connection terminal via respective bonding wires. The resistance value of the series resistor is determined by an electrical measurement between the two connection terminals. On the basis of the resistance value and a temperature-resistance characteristic curve of the series resistor, the temperature of the power semiconductor is determined based on the temperature of the series resistor.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.