Chemical vapour deposition system and process
US9011600B2 · kind B2 · utility
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5References
33Claims
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Assignee
Inventor
Key dates
| Filing date | Feb 12, 2010 |
| Grant date | Apr 21, 2015 |
| Priority date | — |
| Expiry date | Feb 18, 2031 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC30B29/36
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A chemical vapour deposition system, including: a process tube for receiving at least one sample, the process tube being constructed of silicon carbide, impregnated with silicon, and coated with silicon carbide; a pumping system to evacuate the process tube to high vacuum; one or more gas inlets for introducing one or more process gases into the evacuated process tube; and a heater to heat the process tube and thereby heat the one or more process gases and the at least one sample within the process tube to cause a material to be deposited onto the at least one sample within the process tube by chemical vapour deposition.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.