Method for manufacturing conductors and semiconductors
US9011762B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jul 5, 2007 |
| Grant date | Apr 21, 2015 |
| Priority date | — |
| Expiry date | Nov 11, 2030 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH05K2203/1131
- WIPO fieldAudio-visual technology
- WIPO sectorElectrical engineering
Abstract
The invention relates to a sintering method for manufacturing structures by sintering. In addition, the invention relates to a sintered product, an electronic module, and new uses. In the method, a particle material containing conductive or semiconductive encapsulated nanoparticles is sintered, in order to increase its electrical conductivity, by applying a voltage over the particle material. In the method, a substrate is typically used, one surface of which is at least partly equipped with a layer containing nanoparticles. The method is based on thermal feedback between the voltage feed and the nanoparticles. The invention permits the manufacture of conductive and semiconductive structures and pieces by sintering at room temperature and at normal pressure.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.