Patent · US Active

Controlling pit formation in a III-nitride device

US9012250B2 · kind B2 · utility

0Cited by

5References

15Claims

0Family size

Assignee

KONINKLIJKE PHILIPS ELECTRONICS NV · NL

Inventors

Sungsoo Yi · Sunnyvale, US
Nathan Gardner · Provo, US
Qi Ye · San Diego, US

Key dates

Filing date	Apr 17, 2012
Grant date	Apr 21, 2015
Priority date	—
Expiry date	Oct 22, 2032

Classification

Technology area (CPC H)Electricity
CPC primaryH10H20/811
WIPO fieldOptics
WIPO sectorInstruments

Abstract

A device includes a semiconductor structure comprising a III-nitride light emitting layer disposed between an n-type region and a p-type region and a plurality of layer pairs disposed within one of the n-type region and the p-type region. Each layer pair includes an InGaN layer and pit-filling layer in direct contact with the InGaN layer. The pit-filling layer may fill in pits formed in the InGaN layer.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.