Process for producing photovoltaic device
US9012256B2 · kind B2 · utility
Assignees
Inventors
Key dates
| Filing date | Sep 28, 2011 |
| Grant date | Apr 21, 2015 |
| Priority date | — |
| Expiry date | Nov 3, 2031 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY02P70/50
Abstract
A process for producing a photovoltaic device that can improve the power generation characteristics of a solar cell having a heterojunction composed of a p-type crystalline Ge (substrate), an i-type amorphous silicon semiconductor layer, and an n-type amorphous silicon semiconductor layer. A process for producing a photovoltaic device (100) comprising a heterojunction cell (1) prepared by sequentially stacking an i-type amorphous silicon semiconductor layer (12) and an n-type amorphous silicon semiconductor layer (13) on top of a substrate (p-type crystalline Ge (11)), the process comprising a PH3 exposure treatment stage of adjusting the temperature of the substrate (11), from which a surface oxide film has been removed, to a prescribed temperature, and subsequently placing the substrate in a vacuum chamber and exposing the substrate to PH3, an i-layer deposition stage of depositing the i-type amorphous silicon semiconductor layer (12) on the PH3-exposed substrate, an n-layer deposition stage of depositing the n-type amorphous silicon semiconductor layer (13) on the i-type amorphous silicon semiconductor layer (12), and an electrode formation stage of forming electrodes (2, 3, 4) …
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.