Thin film transistors formed by organic semiconductors using a hybrid patterning regime

US9012259B2 · kind B2 · utility

Assignee

• STMicroelectronics SA

Inventors

• Francesco Foncellino · Casagiove, IT
• Giovanna Salzillo · Teverola, IT
• Valeria Casuscelli · Napoli, IT
• Luigi Occhipinti · Ragusa, IT

Key dates

• Filing date: Jan 16, 2014
• Grant date: Apr 21, 2015
• Expiry date: Jan 16, 2034

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10K10/472

Abstract

The present disclosure describes a process strategy for forming bottom gate/bottom contact organic TFTs in CMOS technology by using a hybrid deposition/patterning regime. To this end, gate electrodes, gate dielectric materials and drain and source electrodes are formed on the basis of lithography processes, while the organic semiconductor materials are provided as the last layers by using a spatially selective printing process.