Bipolar transistor with embedded epitaxial external base region and method of forming the same
US9012291B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jul 18, 2014 |
| Grant date | Apr 21, 2015 |
| Priority date | — |
| Expiry date | Jul 18, 2034 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/854
Abstract
The present invention discloses a bipolar transistor with an embedded epitaxial external base region, which is designed to solve the problem of the TED effect with the prior art structures. The bipolar transistor with an embedded epitaxial external base region of the present invention comprises at least a collector region, a base region and an external base region on the collector region, an emitter on the base region, and sidewalls at both sides of the emitter. The external base region is grown through an in-situ doping selective epitaxy process and is embedded in the collector region. A portion of the external base region is located beneath the sidewalls. The present invention discloses a method of forming a bipolar transistor with an embedded epitaxial external base region. The bipolar transistor with an embedded epitaxial external base region of the present invention avoids the TED effect and reduces the resistance of the external base region of the device so that the performance of the device is improved. The method of forming a bipolar transistor with an embedded epitaxial external base region of the present invention achieves the aforesaid bipolar transistor with an embedded…
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.