Patent · US Active

Low defect chemical mechanical polishing composition

US9012327B2 · kind B2 · utility

2Cited by

5References

9Claims

0Family size

Assignee

Rohm and Haas Electronic Materials CMP Holdings, Inc. · US

Inventor

Yi Guo · Shanghai, CN

Key dates

Filing date	Sep 18, 2013
Grant date	Apr 21, 2015
Priority date	—
Expiry date	Nov 7, 2033

Classification

Technology area (CPC H)Electricity
CPC primaryH01L21/31053
WIPO fieldBasic materials chemistry
WIPO sectorChemistry

Abstract

A low defect chemical mechanical polishing composition for polishing silicon oxide containing substrates is provided comprising, as initial components: water, a colloidal silica abrasive; and, an additive according to formula I.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.