Laser annealing method and laser annealing apparatus
US9012338B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Dec 2, 2011 |
| Grant date | Apr 21, 2015 |
| Priority date | — |
| Expiry date | Apr 26, 2033 |
Classification
- Technology area (CPC B)Performing Operations; Transporting
- CPC primaryB23K2103/56
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
In the present invention, At least one row of lens arrays, in which a plurality of lenses are arranged in a direction intersecting with the conveying direction of a substrate to correspond to the plurality of TFT forming areas set in a matrix on the substrate, is shifted in the direction intersecting with the conveying direction of the substrate, to thereby align the lenses in the lens array with the TFT forming areas on the substrate based on the alignment reference position. The laser beams are irradiated onto the lens array when the substrate moves and the TFT forming areas reach the underneath of the corresponding lenses of the lens array, and the laser beams are focused by the plurality of lenses to anneal the amorphous silicon film in each TFT forming area.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.