Semiconductor light-emitting devices including contact layers to form reflective electrodes
US9012884B2 · kind B2 · utility
3Cited by
1References
19Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Mar 14, 2013 |
| Grant date | Apr 21, 2015 |
| Priority date | — |
| Expiry date | May 4, 2033 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H20/832
Abstract
A semiconductor light-emitting device includes a contact layer. The contact layer has the composition ratio of Al elements which varies gradually therein. A region formed by an Al element in the contact layer of the semiconductor light-emitting device may improve light extraction efficiency of the light emitted from an active layer and facilitate a formation of the reflective electrode.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.