Patent · US Active

Radiation-emitting semiconductor component

US9012926B2 · kind B2 · utility

5Cited by
2References
20Claims
0Family size

Assignee

Inventors

Key dates

Filing dateAug 5, 2010
Grant dateApr 21, 2015
Priority date
Expiry dateSep 5, 2031

Classification

  • Technology area (CPC H)Electricity
  • CPC primaryH10H20/857

Abstract

A radiation-emitting semiconductor component includes a light-emitting diode chip with at least two emission regions that can be operated independently of each other and at least two differently designed conversion elements. During operation of the light-emitting diode chips each of the emission regions is provided for generating electromagnetic primary radiation. Each emission region has an emission surface by which at least part of the primary radiation is decoupled from the light-emitting diode chip. The conversion elements are provided for absorbing at least part of the primary radiation and for re-emitting secondary radiation. The differently designed conversion elements are disposed downstream of different emission surfaces. An electric resistance element is connected in series or parallel to at least one of the emission regions.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.