Method of forming semiconductor layer and semiconductor light emitting device
US9012934B2 · kind B2 · utility
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3References
20Claims
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Key dates
| Filing date | Aug 29, 2013 |
| Grant date | Apr 21, 2015 |
| Priority date | — |
| Expiry date | Aug 29, 2033 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H20/82
Abstract
A method of forming a semiconductor layer is provided. The method includes forming a plurality of nanorods on a substrate and forming a lower semiconductor layer on the substrate so as to expose at least portions of the nanorods. The nanorods are removed so as to form voids in the lower semiconductor layer, and an upper semiconductor layer is formed on an upper portion of the lower semiconductor layer and the voids.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.