Patent · US Active

Stress sensor for measuring mechanical stresses in a semiconductor chip and stress compensated hall sensor

US9016135B2 · kind B2 · utility

7Cited by

5References

16Claims

0Family size

Assignee

MELEXIS TECHNOLOGIES NV · BE

Inventors

Samuel Huber · Hamburg, DE
Arnaud Laville · Neuchâtel, CH
Wouter Leten · Mol, BE
Christian Schott · Morges, CH

Key dates

Filing date	Feb 16, 2012
Grant date	Apr 28, 2015
Priority date	—
Expiry date	Feb 14, 2033

Classification

Technology area (CPC G)Physics
CPC primaryG01L5/162
WIPO fieldMeasurement
WIPO sectorInstruments

Abstract

A stress sensor (1) for detecting mechanical stress in a semiconductor chip (2) has a Wheatstone bridge formed by four integrated resistors R1 to R4, the resistors R1 and R4 being p-type resistors and the resistors R2 and R3 being n-type resistors.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.