Patent · US Active

Magnetic element electrode lamination

US9017832B2 · kind B2 · utility

0Cited by

9References

18Claims

0Family size

Assignee

Seagate Technology LLC · US

Inventors

Eric W. Singleton · Pretoria, ZA
Liwen Tan · Eden Prairie, US
Jae-Young Yi · Prior Lake, US

Key dates

Filing date	Jan 31, 2013
Grant date	Apr 28, 2015
Priority date	—
Expiry date	Apr 10, 2033

Classification

Technology area (CPC Y)Emerging Cross-Sectional Technologies
CPC primaryY10T428/1143
WIPO fieldMeasurement
WIPO sectorInstruments

Abstract

Various embodiments may be generally directed to a magnetic element capable of optimized magnetoresistive data reading. Such a magnetic element may be configured at least with a magnetoresistive stack that has an electrode lamination having at least a transition metal layer disposed between a magnetically free layer of the magnetoresistive stack and an electrode layer of the electrode lamination.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.