Method for forming diffusion regions in a silicon substrate

US9018033B2 · kind B2 · utility

Assignee

• SUNPOWER CORPORATION · US

Inventors

• Kahn Wu · San Francisco, US
• Steven M. Kraft · Albany, US
• Paul Loscutoff · Castro Valley, US
• Steven Molesa · San Jose, US

Key dates

• Filing date: Oct 23, 2013
• Grant date: Apr 28, 2015
• Expiry date: Oct 23, 2033

Classification

• Technology area (CPC Y): Emerging Cross-Sectional Technologies
• CPC primary: Y02P70/50

Abstract

A method of manufacturing solar cells is disclosed. The method comprises depositing an etch-resistant dopant material on a silicon substrate, the etch-resistant dopant material comprising a dopant source, forming a cross-linked matrix in the etch-resistant dopant material using a non-thermal cure of the etch-resistant dopant material, and heating the silicon substrate and the etch-resistant dopant material to a temperature sufficient to cause the dopant source to diffuse into the silicon substrate.