Lattice matchable alloy for solar cells
US9018522B2 · kind B2 · utility
5Cited by
43References
10Claims
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Key dates
| Filing date | Oct 10, 2014 |
| Grant date | Apr 28, 2015 |
| Priority date | — |
| Expiry date | Oct 10, 2034 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10T428/12
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
An alloy composition for a subcell of a solar cell is provided that has a bandgap of at least 0.9 eV, namely, Ga1-xInxNyAs1-y-zSbz with a low antimony (Sb) content and with enhanced indium (In) content and enhanced nitrogen (N) content, achieving substantial lattice matching to GaAs and Ge substrates and providing both high short circuit currents and high open circuit voltages in GaInNAsSb subcells for multijunction solar cells. The composition ranges for Ga1-xInxNyAs1-y-zSbz are 0.07≦x≦0.18, 0.025≦y≦0.04 and 0.001≦z≦0.03.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.