Phase-change memory cell

US9018614B2 · kind B2 · utility

Assignees

• STMicroelectronics (Crolles 2) SAS · FR
• COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES · FR

Inventors

• Jean-François Nodin · Yssingeaux, FR
• Veronique Sousa · Grenoble, FR
• Sandrine Lhostis · Theys, FR

Key dates

• Filing date: Sep 4, 2013
• Grant date: Apr 28, 2015
• Expiry date: Sep 4, 2033

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10N70/8828

Abstract

A memory cell including a via made of a phase-change material arranged between a lower electrode and an upper electrode, wherein the via includes a central region laterally surrounded with a peripheral region, the crystallization and melting temperatures of the central region being respectively lower than those of the peripheral region.