Topological insulator structure having magnetically doped topological insulator quantum well film

US9018617B2 · kind B2 · utility

Assignees

• TSINGHUA UNIVERSITY · CN
• INSTITUTE OF PHYSICS, THE CHINESE ACADEMY OF SCIENCES · CN

Inventors

• Qi Xue · Nanjing, CN
• Ke He · Beijing, CN
• Xu-Cun Ma · Beijing, CN
• Xi Chen · Sunnyvale, US
• Li Wang
• Cui-Zu Chang · Beijing, CN
• Xiao Feng · Beijing, CN
• Yao-Yi Li · Beijing, CN
• Jin-Feng Jia · Beijing, CN

Key dates

• Filing date: Oct 16, 2013
• Grant date: Apr 28, 2015
• Expiry date: Oct 16, 2033

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10N52/85

Abstract

A topological insulator structure includes an insulating substrate and a magnetically doped TI quantum well film located on the insulating substrate. A material of the magnetically doped TI quantum well film is represented by a chemical formula of Cry(BixSb1-x)2-yTe3. 0<x<1, 0<y<2. Values of x and y satisfies that an amount of a hole type charge carriers introduced by a doping with Cr is substantially equal to an amount of an electron type charge carriers introduced by a doping with Bi. The magnetically doped TI quantum well film is in 3 QL to 5 QL.