Terahertz electromagnetic wave conversion device
US9018683B2 · kind B2 · utility
Assignees
Inventors
Key dates
| Filing date | Dec 3, 2010 |
| Grant date | Apr 28, 2015 |
| Priority date | — |
| Expiry date | Dec 3, 2030 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10F30/282
Abstract
The purpose of the present invention is to improve the efficiency of conversion between terahertz electromagnetic wave energy and direct current energy via plasma waves in a terahertz electromagnetic wave conversion device with a field effect transistor structure. This invention has an HEMT structure having a substrate, an electron transit layer, an electron supply layer, a source and a drain, and includes a first and second group of gates. The gate length of each finger of the first group of gates is narrower than the gate length of each finger of the second group of gates, and each finger of each group of gates is disposed between the source and the drain on the same cycle. A first and second distance from each finger of the first group of gates to two fingers of the second group of gates adjacent to each finger are unequal lengths.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.