Semiconductor structure for an electronic interruptor power switch

US9018685B2 · kind B2 · utility

Assignees

• INSTITUT NATIONAL DES SCIENCES APPLIQUÉES DE LYON · FR
• CENTRE NATIONAL DE LA RECHERCHE SCIENTIFIQUE · FR

Inventors

• Dominique Tournier · Val-de-Reuil, FR
• Pierre Brosselard · Villeurbanne, FR
• Florian Chevalier · Orange, FR

Key dates

• Filing date: Jul 13, 2011
• Grant date: Apr 28, 2015
• Expiry date: Jul 13, 2031

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D62/8325

Abstract

The invention relates to a structure comprising an n-type substrate (1) having a bottom surface (10) and a top surface (11), a drain (D) contacting the bottom surface (10) of the substrate (1), a first n-type semiconductor region (2) having a top surface (21) provided with a contact area (210), a source (S) contacting the contact area (210), and a second p-type semiconductor region (3) arranged inside the first semiconductor region (2) and defining first and second conduction channels (C1, C2) between the drain and the source, characterized in that said structure comprises first and second metal gratings (G1, G2), each of which has a portion (40, 71) contacting the first semiconductor region (2) so as to form a Schottky junction.