Deuterated film encapsulation of nonvolatile charge trap memory device
US9018693B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Mar 28, 2014 |
| Grant date | Apr 28, 2015 |
| Priority date | — |
| Expiry date | Mar 28, 2034 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/0002
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Nonvolatile charge trap memory devices with deuterium passivation of charge traps and methods of forming the same are described. In one embodiment, the device includes a channel formed from a semiconducting material overlying a surface on a substrate connecting a source and a drain of the memory device. A gate stack overlies the channel, the gate stack comprising a tunneling layer, a trapping layer, a blocking layer, a gate layer; and a deuterated gate cap layer. The gate cap layer has a higher deuterium concentration at an interface with the gate layer than at surface of the gate cap layer distal from the gate layer. In certain embodiments, the channel comprises polysilicon or recrystallized polysilicon. Other embodiments are also described.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.