Beta voltaic semiconductor photodiode fabricated from a radioisotope
US9018721B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Feb 8, 2011 |
| Grant date | Apr 28, 2015 |
| Priority date | — |
| Expiry date | Feb 28, 2034 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG21H1/06
- WIPO fieldEngines, pumps, turbines
- WIPO sectorMechanical engineering
Abstract
In one preferred embodiment, a semiconductor photodiode is provided which includes a substrate layer fabricated from a Si32 radioisotope of a first type of conductivity material and a thick-field oxide layer formed on the substrate layer. The oxide layer has a selectively patterned area to form an open region on the substrate layer. The semiconductor photodiode further includes a dopant material of a second conductivity material, which is different from the first conductivity material. The dopant material is formed within the open region on the substrate layer to form a photodiode junction. The semiconductor photodiode further includes an enclosure package enclosing the semiconductor diode for containing any radiation from the radioisotope.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.