Patent · US Active

Method for fabricating inductor device

US9018731B2 · kind B2 · utility

2Cited by

7References

19Claims

0Family size

Assignee

Semiconductor Manufacturing International Corp. · CN

Inventors

Jenhao Cheng · Shanghai, CN
Xining Wang · Shanghai, CN
Ling Liu · Shanghai, CN

Key dates

Filing date	Oct 13, 2014
Grant date	Apr 28, 2015
Priority date	—
Expiry date	Oct 13, 2034

Classification

Technology area (CPC H)Electricity
CPC primaryH01L2924/0002
WIPO fieldSemiconductors
WIPO sectorElectrical engineering

Abstract

Various embodiments provide inductor devices and fabrication methods. An exemplary inductor device can include a plurality of planar spiral wirings isolated by a dielectric layer. The planar spiral wirings can be connected by conductive pads formed over the dielectric layer and by conductive plugs formed in the dielectric layer. In one embodiment, a third planar spiral wiring can be formed over a second planar spiral wirings that is formed over a first planar spiral wiring. The third planar spiral wiring can be configured in parallel with the first third planar spiral wiring. The second planar spiral wiring can be configured in series with the first and third planar spiral wirings configured in parallel.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.